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| FJP5555 FJP5555 High Voltage Switch Mode Application * Fast Speed Switching * Wide Safe Operating Area * Suitable for Electronic Ballast Application 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Value 1050 400 14 5 10 75 150 - 55 ~ 150 Units V V V A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO hFE VCE(sat) VBE(sat) Cob tON tSTG tF tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * DC Test Condition IC=500A, IE=0 IC=5mA, IB=0 IE=500A, IC=0 VCE=5V, IC=10mA VCE=3V, IC=0.8A IC=1A, IB=0.2A IC=3.5A, IB=1.0A IC=3.5A, IB=1.0A VCB=10V, f=1MHz VCC=125V, IC=0.5A IB1=45mA, IB2=0.5A RL=250 VCC=250V, IC=2.5A IB1=0.5A, IB2=1.0A RL=100 Min. 1050 400 14 10 20 Typ. Max. Units V V V Current Gain 40 0.5 1.5 1.2 45 1.0 1.2 0.3 2.0 2.5 0.3 V V V pF s s s s s s Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Turn On Time Storage Time Fall Time Turn On Time Storage Time Fall Time * Pulse test: PW300s, Duty Cycle2% (c)2004 Fairchild Semiconductor Corporation Rev. A, June 2004 FJP5555 Typical Characteristics 5.0 4.5 100 Ta = 75 C Ta = 125 C o o VCE = 5V IC [A], COLLECTOR CURRENT 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 IB = 600mA hFE, DC CURRENT GAIN Ta = 25 C Ta = - 25 C 10 o o IB = 200mA IB = 100mA 6 7 8 9 1 1E-3 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristics Figure 2. DC Current Gain 10 VCE(sat) [V], SATURATION VOLTAGE IC = 5 IB 10 Ta = 125 C 1 o VBE(sat) [V], SATURATION VOLTAGE IC = 5 IB 1 Ta = - 25 C o Ta = 25 C o Ta = 75 C Ta = - 25 C o o o Ta = 125 C 0.1 o Ta = 75 C o 0.1 Ta = 25 C 0.01 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Saturation Voltage Figure 4. Saturation Voltage 1 tSTG & tF [us], SWITCHING TIME tSTG & tF [us], SWITCHING TIME tSTG 1 tSTG 0.1 tF 0.1 VCC=125V IB1=45mA, IB2=0.5A tF VCC=250V IB1=0.5A, IB2=1.0A 0.01 0.1 1 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Figure 6. Resistive Load Switching (c)2004 Fairchild Semiconductor Corporation Rev. A, June 2004 FJP5555 Typical Characteristics (Continued) 100 90 IC [A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 100 1000 10 80 70 60 50 40 30 20 10 0 0 25 50 o VCC=50V, L=1mH IB1=3A, RB2=0 1 10 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE Tc[ C], CASE TEMPERATURE Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating 100 IC[A], COLLECTOR CURRENT 10 ICP(max) IC(max) DC 100ms 10ms 1 0.1 o Tc=25 C Single Pulse 0.01 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 9. Forward Biased Safe Operating Area (c)2004 Fairchild Semiconductor Corporation Rev. A, June 2004 FJP5555 Package Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. A, June 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2004 Fairchild Semiconductor Corporation Rev. I11 |
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